savantic semiconductor product specification silicon npn power transistors 2SD1115K d escription with to-220 package darlington applications for high voltage switching and ignitor applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 400 v v ceo collector-emitter voltage open base 300 v v ebo emitter-base voltage open collector 7 v i c collector current 3 a i cm collector current-peak 6 a p t total power dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SD1115K characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =2a ; pw=50s f=50hz, l=10mh 300 v v cbo collector-base breakdown voltage i c =0.1a ,i e =0 400 v v ebo emitter-base breakdown voltage i e =50ma ;i c =0 7 v v cesat collector-emitter saturation voltage i c =2a; i b =20ma 1.5 v v besat base-emitter saturation voltage i c =2a; i b =20ma 2.0 v i ceo collector cut-off current v ce =300v; r be = a 0.1 ma h fe dc current gain i c =2a ; v ce =2v 500 switching times t on turn-on time 1.0 s t off turn-off time i c =2a;i b1 =- i b2 =20ma 22 s
savantic semiconductor product specification 3 silicon npn power transistors 2SD1115K package outline fig.2 outline dimensions(unindicated tolerance: 0.10 mm)
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